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| (R) BTA/BTB10 Series 10A TRIACS SNUBBERLESSTM & STANDARD MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT (Q1) Value 10 600 and 800 25 to 50 Unit A V mA G A2 A1 A2 DESCRIPTION Available either in standard or snubberless version, the BTA/BTB10 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers, ... The snubberless version (W suffix) is specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500 V RMS) complying with UL standards (File ref.: E81734). ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25C) It Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns Parameter A1 A2 G A1 A2 G TO-220AB Insulated (BTA10) TO-220AB (BTB10) Value TO-220AB Tc = 105C 10 Tc = 95C t = 16.7 ms t = 20 ms 105 100 55 Tj = 125C Tj = 25C Tj = 125C Tj = 125C 50 VDRM/VRRM + 100 Unit A TO-220AB Ins. F = 60 Hz F = 50 Hz tp = 10 ms F = 120 Hz tp = 10 ms tp = 20 s ITSM A I t dI/dt A s A/s V A W C 1/6 VDSM/VRSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range 4 1 - 40 to + 150 - 40 to + 125 April 2002 - Ed: 5A BTA/BTB10 Series ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) s SNUBBERLESSTM (3 Quadrants) Symbol Test Conditions Quadrant BTA/BTB10 CW IGT (1) VGT VGD IH (2) IL dV/dt (2) (dI/dt)c (2) VD = 12 V VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM gate open Tj = 125C Without snubber Tj = 125C I - III II MIN. MIN. RL = 33 RL = 3.3 k Tj = 125C I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. MAX. 35 50 60 500 5.5 35 1.3 0.2 50 70 80 1000 9.0 V/s A/ms BW 50 mA V V mA mA Unit s STANDARD (4 Quadrants) Symbol Test Conditions Quadrant BTA/BTB10 C IGT (1) VGT VGD IH (2) IL dV/dt (2) VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 %VDRM gate open Tj = 125C Tj = 125C I - III - IV II MIN. MIN. (dV/dt)c (2) (dI/dt)c = 4.4 A/ms RL = 3.3 k Tj = 125C VD = 12 V RL = 33 I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. 25 40 80 200 5 25 50 1.3 0.2 50 50 100 400 10 V/s V/s B 50 100 mA V V mA mA Unit STATIC CHARACTERISTICS Symbol VTM (2) Vto (2) Rd (2) IDRM IRRM Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 Test Conditions ITM = 14 A tp = 380 s Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C MAX. MAX. MAX. MAX. Value 1.55 0.85 40 5 1 Unit V V m A mA Threshold voltage Dynamic resistance VDRM = VRRM 2/6 BTA/BTB10 Series THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-a) Junction to case (AC) Junction to ambient Parameter TO-220AB TO-220AB Insulated TO-220AB TO-220AB Insulated Value 1.5 2.4 60 C/W Unit C/W PRODUCT SELECTOR Voltage (xxx) Part Number 600 V BTA/BTB10-xxxB BTA/BTB10-xxxBW BTA/BTB10-xxxC BTA/BTB10-xxxCW BTB: Non insulated TO-220AB package Sensitivity 800 V X X X X 50 mA 50 mA 25 mA 35 mA X X X X Type Standard Snubberless Standard Snubberless Package TO-220AB TO-220AB TO-220AB TO-220AB ORDERING INFORMATION BT A 10 TRIAC SERIES INSULATION: A: insulated B: non insulated CURRENT: 10A 600 BW (RG) PACKING MODE Blank: Bulk RG: Tube VOLTAGE: 600: 600V 800: 800V SENSITIVITY & TYPE B: 50mA STANDARD BW: 50mA SNUBBERLESS C: 25mA STANDARD CW: 35mA SNUBBERLESS OTHER INFORMATION Part Number BTA/BTB10-xxxyz BTA/BTB10-xxxyzRG Marking BTA/BTB10xxxyz BTA/BTB10-xxxyz Weight 2.3 g 2.3 g Base quantity 250 50 Packing mode Bulk Tube Note: xxx = voltage, y = sensitivity, z = type 3/6 BTA/BTB10 Series Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). P (W) 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Fig. 2: RMS on-state current versus case temperature (full cycle). IT(RMS) (A) 12 11 10 9 8 7 6 5 4 3 2 1 0 BTB BTA IT(RMS) (A) 0 1 2 3 4 5 6 7 8 9 10 Tc(C) 0 25 50 75 100 125 Fig. 3: Relative variation of thermal impedance versus pulse duration. K=[Zth/Rth] 1E+0 Zth(j-c) Fig. 4: values). ITM (A) 100 On-state characteristics (maximum Tj max. Vto = 0.85 V Rd = 40 mW Tj max 1E-1 Zth(j-a) 10 Tj=25C tp (s) 1E-2 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 VTM (V) 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 5: Surge peak on-state current versus number of cycles. Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of It. ITSM (A), It (As) 1000 Tj initial=25C ITSM (A) 110 100 90 80 70 60 50 40 30 20 10 0 t=20ms Non repetitive Tj initial=25C One cycle dI/dt limitation: 50A/s ITSM 100 It Repetitive Tc=95C Number of cycles 1 10 100 1000 10 0.01 0.10 tp (ms) 1.00 10.00 4/6 BTA/BTB10 Series Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25C] 2.5 2.0 IGT Fig. 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.0 1.8 1.6 1.4 B C 1.5 IH & IL 1.2 1.0 0.8 0.6 BW/CW 1.0 0.5 Tj(C) 0.0 -40 -20 0 20 40 60 80 100 120 140 (dV/dt)c (V/s) 1.0 10.0 100.0 0.4 0.1 Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. (dI/dt)c [Tj] / (dI/dt)c [Tj specified] 6 5 4 3 2 1 0 0 25 50 Tj (C) 75 100 125 5/6 BTA/BTB10 Series PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS B C REF. Millimeters Min. Typ. 3.75 Max. Min. Inches Typ. 0.147 Max. 0.625 b2 L F I A l4 a1 c2 l3 l2 a2 b1 e M c1 A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M 15.20 15.90 0.598 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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